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| Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque (M3) TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Test Conditions T J = 25C to 150C T J = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE= 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 600 600 20 30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C C g g Features * International standard packages * IGBT and anti-parallel FRED in one package * Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.5 200 3 100 2.0 V V mA mA nA V * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies G = Gate, E = Emitter, C = Collector, TAB = Collector G C E TAB TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) 1.13/10 Nm/lb.in. 300 6 4 BVCES VGE(th) ICES IGES VCE(sat) IC IC = 750 mA, VGE = 0 V = 250 mA, VCE = VGE Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw (isolated mounting screw hole) * Reduces assembly time and cost * High power density VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 98567A (7/00) (c) 2000 IXYS All rights reserved 1-2 IXGH 28N60BD1 IXGT 28N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 14 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 170 40 80 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 15 30 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 15 25 200 200 3 15 25 1 400 400 6 400 400 6 100 30 40 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.83 K/W TO-247 0.25 K/W Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXGH) Outline gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % 1.5 2.49 TO-268AA (D3 PAK) Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 2.5 6 100 25 V V A ns ns Dim. IF = IC90, VGE = 0 V, TJ = 150C Pulse test, t 300 ms, duty cycle d 2 % TJ = 25C IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 100C TJ = 25C 1 K/W Min. Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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